APTM20AM10STG APTM20AM10STG C rev 3 july, 2006 www.microsemi.com 1 C 6 nt c2 out vbus nt c1 0/vbu s q1 g1 q2 s1s2 g2 nt c2 s1 out out nt c1 vbus 0/ vb us g2 s2 g1 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed. see application note apt0502 on www.microsemi.com s ymbol parameter max ratings unit v dss drain - source breakdown voltage 200 v t c = 25c 175 i d continuo us drain current t c = 80c 131 i dm pulsed drain current 700 a v gs gate - source voltage 30 v r dson drain - source on resistance 12 m ? p d maximum power dissipation t c = 25c 694 w i ar avalanche current (repetitive and non repetitive) 89 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj v dss = 200v r dson = 10m ? typ @ tj = 25c i d = 175a @ tc = 25c applicatio n ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate c harge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant p hase leg series & parallel diodes m osfet power module downloaded from: http:///
APTM20AM10STG APTM20AM10STG C rev 3 july, 2006 www.microsemi.com 2 C 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 200v t j = 25c 200 i dss zero gate voltage drain current v gs = 0v,v ds = 160v t j = 125c 1000 a r ds(on) drain C source on resistance v gs = 10v, i d = 87.5a 10 12 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 5ma 3 5 v i gs s gate C source leakage current v gs = 30 v, v ds = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 13.7 c oss output capacitance 4.36 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.19 nf q g total gate charge 224 q gs gate C source charge 86 q gd gate C drain charge v gs = 10v v bus = 100v i d = 150a 94 nc t d(on) tur n-o n delay ti me 28 t r rise time 56 t d(off) turn-off delay time 81 t f fall time inductive switching @ 125c v gs = 15v v bus = 133v i d = 150a r g = 2.5 ? 99 ns e on turn-on switching energy 926 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 133v i d = 150a, r g = 2.5 ? 910 j e on turn-on switching energy 1216 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 133v i d = 150a, r g = 2.5 ? 1062 j diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 200 v t j = 25c 250 i rm maximum reverse leakage current v r =200v t j = 125c 750 a i f dc forward current t c = 85c 90 a i f = 90a 1.1 1.15 i f = 180a 1.4 v f diode forward voltage i f = 90a t j = 125c 0.9 v t j = 25c 24 t rr reverse recovery time t j = 125c 48 ns t j = 25c 99 q rr reverse recovery charge i f = 90a v r = 133v di/dt = 600a/s t j = 125c 450 nc downloaded from: http:///
APTM20AM10STG APTM20AM10STG C rev 3 july, 2006 www.microsemi.com 3 C 6 thermal and package characteristics symbol characteristic min typ max unit transistor 0.18 r thjc junction to case thermal resistance diode 0.45 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more informa tion). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85/25 25 sp4 package outline (dimensions in mm) all dimensions marked " * " are tolerenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM20AM10STG APTM20AM10STG C rev 3 july, 2006 www.microsemi.com 4 C 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse durat ion 5.5v 6v 6.5v 7v 7.5v 9v 0 100 200 300 400 500 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 100 200 300 400 23456789 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 0 40 80 120 160 200 240 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 87.5a 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTM20AM10STG APTM20AM10STG C rev 3 july, 2006 www.microsemi.com 5 C 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown volta g e ( normalized ) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 87.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area dc line 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r dson single pulse t j =150c t c =25c ciss crss coss 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =40v v ds =100v v ds =160v 0 2 4 6 8 10 12 0 50 100 150 200 250 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =150a t j =25c downloaded from: http:///
APTM20AM10STG APTM20AM10STG C rev 3 july, 2006 www.microsemi.com 6 C 6 delay times vs current td (on) td (off) 10 20 30 40 50 60 70 80 90 0 50 100 150 200 250 300 i d , drain current (a) t d(on) and t d(off) (ns) v ds =133v r g =2.5 ? t j =125c l= 100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 i d , drain current (a) t r and t f (ns) v ds =133v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off 0 0.5 1 1.5 2 2.5 0 50 100 150 200 250 300 i d , drain current (a) e on and e off (mj) v ds =133v r g =2.5 ? t j =125c l=100h e on e on e off 1 1.5 2 2.5 3 0 5 10 15 20 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =133v i d =150a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 350 20 40 60 80 100 120 140 160 i d , drain current (a) frequency (khz) operating frequency vs drain curren t v ds =133v d=50% r g =2.5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe ci ficatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5, 182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and fore ign patents pending. all rights reserved. downloaded from: http:///
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